First-principles study of the conduction mechanism in tantala-based resistive memory devices
Author:
Affiliation:
1. Samsung Electronics,Computational Science & Engineering,Hwaseong-si,Korea
2. Samsung Electronics,Advanced Device Research, Semiconductor R&D Center,Hwaseong-si,Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319564.pdf?arnumber=10319564
Reference18 articles.
1. Electronic Transport in Mesoscopic Systems
2. Density-functional method for nonequilibrium electron transport
3. Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements
4. Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering
5. Efficient pseudopotentials for plane-wave calculations
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