Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors-Reference-Cited by-同舟云学术

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Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors

Published:2023-06-29 Issue: Volume: Page:
ISSN:
Container-title:2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)
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Author:

Kloes Alexander¹,Schwarz Mike¹,Han Yi²,Zhao Qing-Tai²,Roemer Christian¹

Affiliation:

1. NanoP, THM University of Applied Sciences,Giessen,Germany,35390

2. DEEEA, Universitat Rovira i Virgili,Tarragona,Spain

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10203036/10203110/10203276.pdf?arnumber=10203276

Reference24 articles.

1. Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform

2. Cryogenic characteristics of UTBB SOI Schottky-Barrier MOSFETs

3. Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs

4. Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physics-based compact current model for Schottky barrier transistors at deep cryogenic temperatures including band tail effects and quantum oscillations;Solid-State Electronics;2024-02

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