Acoustic Emission Characteristics of SiC MOSFET Based on Flexible Sensor
Author:
Affiliation:
1. Shanghai Jiao Tong University,Key Laboratory of Control of Power Transmission and Conversion (SJTU), Ministry of Education,Department of Electrical Engineering,Shanghai,China
Funder
National Natural Science Foundation of China
Harbin University of Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10328969/10328949/10329064.pdf?arnumber=10329064
Reference10 articles.
1. A Survey of Wide Bandgap Power Semiconductor Devices
2. Review of Power Semiconductor Device Reliability for Power Converters
3. Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review
4. High-Temperature Partial Discharge Characteristics of Power Module Packaging Insulation Under Square Pulse With High Dv/Dt Based on Down-Mixing Method
5. Space-Charge Accumulation and Its Impact on High-Voltage Power Module Partial Discharge Under DC and PWM Waves: Testing and Modeling
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1. Analysis of Stress Wave Characteristics in SiC MOSFETs with Solder Layer Voids;2024 3rd International Conference on Energy, Power and Electrical Technology (ICEPET);2024-05-17
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