DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8521654/8539858/08539934.pdf?arnumber=8539934
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Realizing Joint Communication and Sensing RF Receiver Front-Ends: A Survey;IEEE Access;2024
2. A 3-Stacked 10.2 dBm OP1dB D-Band Power Amplifier in 22 nm FDSOI for 6G Communication;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
3. Impact of High Temperature Up to 175 °C on the DC and RF Performances of 22-nm FD-SOI MOSFETs;IEEE Transactions on Electron Devices;2023-10
4. Radar Characterization of a Broadband 77 GHz IQ Transceiver Chipset in 22 nm FDX CMOS;2023 20th European Radar Conference (EuRAD);2023-09-20
5. A novel reconfigurable RF switch based on ferroelectric hafnium oxide FeFET fabricated in 22 nm FDSOI technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
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