Design and fabrication of 3.3kV SiC MOSFETs for industrial applications
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988908.pdf?arnumber=7988908
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved HF-FOM and SC Ruggedness of Split-Gate 4H-SiC MOSFET With P+ Buffer;IEEE Electron Device Letters;2024-07
2. Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation;IEEE Electron Device Letters;2021-12
3. Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021-08
4. Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology;IEEE Transactions on Power Electronics;2021-07
5. Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures;Micromachines;2021-06-27
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