Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)-Reference-Cited by-同舟云学术

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

Published:1978-03 Issue:2 Volume:32 Page:175-177
ISSN:0003-7028
Container-title:Applied Spectroscopy
language:en
Short-container-title:Appl Spectrosc

Author:

Bradley L.¹,Bosworth Y. M.¹,Briggs D.¹,Gibson V. A.¹,Oldman R. J.¹,Evans A. C.¹,Franks J.¹

Affiliation:

1. ICI Ltd., Mond Division (L.B., R.J.O.), Corporate Laboratory (Y.M.B., D.B., V.A.G.), Runcorn, Cheshire, England, and Ion Tech Ltd., 2 Park Street, Teddington, Middlesex, England (A.C.E., J.F.)

Abstract

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

Publisher

SAGE Publications

Subject

Spectroscopy,Instrumentation

Link

http://journals.sagepub.com/doi/pdf/10.1366/000370278774331468

Reference5 articles.

1. Briggs D., Molecular Spectroscopy, West A. R., Ed. (Heyden & Son, London, 1977), p. 468.

2. A saddle field ion source of spherical configuration for etching and thinning applications

3. The ionic charge states produced by the oscillating electron electrostatic ion source

4. Sensitivity of detection of the elements by photoelectron spectrometry

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