High-temperature piezoelectirc thin films of 0.20BiInO3-0.80PbTiO3 deposited by pulsed laser deposition（Retracted Article)-Reference-Cited by-同舟云学术

High-temperature piezoelectirc thin films of 0.20BiInO3-0.80PbTiO3 deposited by pulsed laser deposition（Retracted Article)

Published:2013 Issue:23 Volume:62 Page:237701
ISSN:1000-3290
Container-title:Acta Physica Sinica
language:
Short-container-title:Acta Phys. Sin.

Author:

Wang Wei ,Tang Jia-Wei ,Wang Le-Tian ,Chen Xiao-Bing ,

Abstract

High-temperature piezoelectric thin films of 0.20BiInO3-0.80PbTiO3 (20BI-PT) were prepared via pulsed laser deposition and investigated by comparison with 0.15BiInO3-0.85PbTiO3(15BI-PT). XRD patterns show that (100) peak of 20BI-PT has been split, indicating a higher tetragnality than in 15BI-PT. FESEM images reveal some triangular grains corresponding to [111]-oriented grains in 20BI-PT. The remanent polarization (Pr) and coercive field (Ec) of 20BI-PT are ～ 28 C/cm2 and ～120 kV/cm, respectively. It is shown that the transverse piezoelectric coefficient e31, f keeps almost the same in 20BI-PT and 15BI-PT. The temperature dependence of dielectric permittivity in 20BI-PT reveals a higher Curie temperature (590 ℃) than that in 15BI-PT and no apparent frequency dependence is detected. Rayleigh analyses are performed to identify the extrinsic contributions to dielectric nonlinearity for different x. It is seen that x=0.15 exhibits greater extrinsic contributions to dielectric nonlinearity than the other compositions.

Publisher

Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences

Subject

General Physics and Astronomy

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