Author:
Zang Ge ,Huang Yong-Qing ,Luo Yang ,Duan Xiao-Feng ,Ren Xiao-Min ,
Abstract
In this paper, an InP-based mesa-structure uni-traveling-carrier photodetector is designed. By adopting Gaussian doping scheme in the absorption layer and incorporating an appropriate cliff layer, high speed and high saturation current characteristics are both achieved simultaneously. For the device with a 14 μm2 active area, the simulated results indicate that the bandwidth reaches 58 GHz and DC saturation current increases up to 158 mA at a reverse bias of 2 V. Under high optical injection, the bandwidth degradation and current saturation are studied, which are caused by energy band shift and electric field collapse.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference15 articles.
1. Ishibashi T, Shimizu N, Kodama S, Ito H, Nagatsuma T, Furuta T 1997 Tech. Dig. 13 166
2. Jun D H, Jang J H, Adesida I, Song J I 2006 Jpn. J. Appl. Phys. 45 3475
3. Wang X, Duan N, Chen H, Campbell J C 2007 IEEE Photon. Technol. Lett. 19 1272
4. Chtioui M, Lelarge F, Enard A, Pommereau F, Carpentier D, Marceaux A, Dijk F V, Achouche M 2012 IEEE Photon. Technol. Lett. 24 318
5. Zhang R, Hraimel B, Li X, Zhang P, Zhang X 2013 Opt. Express 21 6943
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