Author:
Yang Tian-Yong ,Kong Chun-Yang ,Ruan Hai-Bo ,Qin Guo-Ping ,Li Wan-Jun ,Liang Wei-Wei ,Meng Xiang-Dan ,Zhao Yong-Hong ,Fang Liang ,Cui Yu-Ting , ,
Abstract
The p-type N doped ZnO thin films are fabricated using radio-frequency magnetron sputtering technique in O-rich growth condition together with the direct N+ ion-implantation and annealing. The conductivities and Raman scattering properties of the samples are studied by Hall measurements and Raman spectra respectively. Hall measurements indicate that the optimal p-type ZnO film can be obtained when the sample is annealed at 600 ℃ for 120 min in N2 ambience, and its hole concentration is about 2.527×1017 cm-3. N+-implantation induces three additional vibrational modes in ZnO, which are located at 274.2, 506.7 and 640.4 cm-1 respectively. In the process of the annealing, by comparing the electrical properties and Raman speetra of the samples, we find that the competition between intrinsic donor defects and the activation of N acceptors plays a crucial role in the p-type formation of ZnO:N films during annealing.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
5 articles.
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