Author:
Zhang Ling-Zi ,Zuo Yu-Hua ,Cao Quan ,Xue Chun-Lai ,Cheng Bu-Wen ,Zhang Wan-Chang ,Cao Xue-Lei ,Wang Qi-Ming , ,
Abstract
The drift-diffusion theory is adopted to simulate the bandwidth and the saturation characteristics of InGaAs/InP uni-traveling-carrier (UTC) photodetector. According to the experiment results, we analyze the physical mechanisms in high speed and high power UTC photodetector. It is shown that introducing the cliff layer and the gradually doped absorption layer can enhance the saturation characteristic obviously. Electric field collapse in the absorption layer leads to the saturation, and RC constant is still a limitation factor for device with diameter larger than 20 μm. In this paper we point out the effective methods to improve device performance.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference14 articles.
1. Ishibashi T, Shimizu N, Kodama S, Ito H, Nagatsuma T, Furuta T 1997 Proc. OSA TOPS on Ultrafast Electronics and Optoelectronics 13 83
2. Windhorn T H, Cook L W, Stillman G E 1982 IEEE Electron Device Lett. 3 18
3. Hill P, Schlafer J, Powazinik W, Ueban M, Eichen E, Olshansky R 1987 Appl. Phys. Lett. 50 1260
4. Ito H, Kodama S, Ishibashi T 2000 Electron. Lett. 36 1809
5. Li N, Li X W, Demiguel S, Zheng X G, Campbell J C, Tulchinsky D A, Williams K J, Isshiki T D, Kinsey G S, Sudharsansan R 2004 IEEE Photon. Technol. Lett. 16 864
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献