MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC

Abstract

Temperature-and electric field-dependent electron transport in 6H-SiC has been s tudied by single-particle Monte Carlo technique,and the Hall electron mobility i n 6H-SiC has been measured over the temperature range 77K‖c/μ⊥c in 6H-SiC is nearly 5,and the saturation velocity vs is 2×107cm/s.The simulated results are in good agreement with measured data in a wide range of temperature and electric field.