Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy
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Published:2010
Issue:1
Volume:59
Page:550
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Shao Zheng-Zheng ,Wang Xiao-Feng ,Zhang Xue-Ao ,Chang Sheng-Li ,
Abstract
Piezoelectric discharge characteristic of semiconductor ZnO nanorod was studied with atomic force microscope in contact mode. The c-axial orientation ZnO nanorod array film was fabricated with two-step wet-chemical method. Electric pulses were got when Pt coated probe contact-scans the ZnO nanorod, their peak value reaches 120 pA. The electric pulse is related with the topography of ZnO nanorod and has a time duration of 30 ms. The contact of Pt coated probe and ZnO nanorod behaves as a Schottky diode. The I-V curve showed the piezoelectric voltage must be larger than 03 V to drive Schottky diode. The resistance of Schottky contact has a magnitude of GΩ order during piezoelectric discharge, which is the major factor impacting the output of piezoelectric potential.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy