Author:
Song Jian-Jun ,Zhang He-Ming ,Hu Hui-Yong ,Xuan Rong-Xi ,Dai Xian-Ying ,
Abstract
There has been a lot of interest in the Si based strained technology lately, especially the modification of band structures which provides a theoretical basis for the design of the high-speed and high-performance devices and circuits. The band structure models of strained Si1-xGex on (001),(101),(111) relaxed Si are set up using K.P perturbation method coupled with deformation potential theory. Ge fraction (x) dependence of the conduction band (CB) and the valence band (VB) edge levels, CB and VB splitting energy and the indirect bandgap were obtained. The quantitative data from the models can supply valuable references to the design of devices.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
8 articles.
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