Classification of dynamical switching regimes in a three-layered ferromagnetic nanopillar governed by spin-polarized injection current and external magnetic field. II. Perpendicular anisotropy-Reference-Cited by-同舟云学术

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Classification of dynamical switching regimes in a three-layered ferromagnetic nanopillar governed by spin-polarized injection current and external magnetic field. II. Perpendicular anisotropy

Published:2016-10 Issue:5 Volume:8 Page:755-764
ISSN:2076-7633
Container-title:Computer Research and Modeling
language:
Short-container-title:CRM

Author:

Ostrovskaya Natalia Vladimirovna,Skidanov Vladimir Alexandrovich,Skvortsov Maxim Sergeevich

Publisher

Izhevsk Institute of Computer Science

Subject

Computational Theory and Mathematics,Computer Science Applications,Modelling and Simulation

Reference9 articles.

1. P. Kh. Amiri, Z. M. Zeng, J. Langer, H. Zhao, et al. Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions // Appl. Phys. Lett. - 2011. - V. 98. - 112507.

2. D. T. Denny, Y. Lee. Magnetic Memory: Fundamentals and Technology. - Cambridge University Press, 2010. - 208 p.

3. W. Desin, X. Haiwen, Zh. Yuankai, D. Dimitrov. RAM cells with perpendicular anisotropy. - 2010. - US PATENT Application Publication, Pub. No. US 2010/0109110 AI.

4. F. Ilievski, J. C. Perkinson, C. A. Ross. Magnetic reversal phenomena in pseudo-spin-valve films with perpendicular anisotropy // J. Appl. Phys. - 2007. - V. 101. - 09D116.

5. S. Mangin, D. Ravelosona, Y. Henry, J. A. Katine, Fullerton E. E.. . Spin Transfer Torque Effects in Devices with Perpendicular Anisotropy // AAPPS Bulletin. - 2008. - V. 18, no. 6. - P. 41-46.

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