Performance of high impedance resonators in dirty dielectric environments
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Published:2023-10-06
Issue:1
Volume:10
Page:
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ISSN:2662-4400
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Container-title:EPJ Quantum Technology
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language:en
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Short-container-title:EPJ Quantum Technol.
Author:
Ungerer J. H.,Sarmah D.,Kononov A.,Ridderbos J.,Haller R.,Cheung L. Y.,Schönenberger C.
Abstract
AbstractHigh-impedance resonators are a promising contender for realizing long-distance entangling gates between spin qubits. Often, the fabrication of spin qubits relies on the use of gate dielectrics which are detrimental to the quality of the resonator. Here, we investigate loss mechanisms of high-impedance NbTiN resonators in the vicinity of thermally grown SiO2 and Al2O3 fabricated by atomic layer deposition. We benchmark the resonator performance in elevated magnetic fields and at elevated temperatures and find that the internal quality factors are limited by the coupling between the resonator and two-level systems of the employed oxides. Nonetheless, the internal quality factors of high-impedance resonators exceed 103 in all investigated oxide configurations which implies that the dielectric configuration would not limit the performance of resonators integrated in a spin-qubit device. Because these oxides are commonly used for spin qubit device fabrication, our results allow for straightforward integration of high-impedance resonators into spin-based quantum processors. Hence, these experiments pave the way for large-scale, spin-based quantum computers.
Funder
Swiss Nanoscience Institute NCCR Spin Qubits in Silicon National Center of Competence in Research Quantum Science and Technology Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung Horizon 2020 University of Basel
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Control and Systems Engineering
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