Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO 2 -Si photoanode-Reference-Cited by-同舟云学术

Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO 2 -Si photoanode

Published:2020-04-03 Issue:14 Volume:6 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Cushing Scott K.¹^ORCID,Porter Ilana J.²³^ORCID,de Roulet Bethany R.²^ORCID,Lee Angela²^ORCID,Marsh Brett M.²^ORCID,Szoke Szilard¹,Vaida Mihai E.²⁴^ORCID,Leone Stephen R.²³⁵^ORCID

Affiliation:

1. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125, USA.

2. Department of Chemistry, University of California, Berkeley, Berkeley, CA 94720, USA.

3. Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

4. Department of Physics, University of Central Florida, Orlando, FL 32816, USA.

5. Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA.

Abstract

Ultrafast charge carrier migration through all the layers of a nanojunction is observed and quantified.

Funder

U.S. Department of Energy

Air Force Office of Scientific Research

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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