The Chemistry of Solid-State Electronics-Reference-Cited by-同舟云学术

The Chemistry of Solid-State Electronics

Published:1989-10-20 Issue:4928 Volume:246 Page:347-351
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Yablonovitch E.¹

Affiliation:

1. Member of the technical staff of the Solid-State Science and Technology Research Laboratory of Bell Communications Research, Navesink Research & Engineering Center, Red Bank, NJ 07701-7040.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference25 articles.

1. Alferov. Z. I. U.S.S.R. Inventor's Certificate no. 181737 (1963).

2. ASPNES, D.E., KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION, PHYSICAL REVIEW LETTERS 61: 2782 (1988).

3. ATALLA, M.M., STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES, BELL SYSTEM TECHNICAL JOURNAL 38: 749 (1959).

4. BURROWS, V.A., INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY, APPLIED PHYSICS LETTERS 53: 998 (1988).

5. Molecular Electronic Devices 1982

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