Mobile metallic domain walls in an all-in-all-out magnetic insulator

Author:

Ma Eric Yue12,Cui Yong-Tao1,Ueda Kentaro34,Tang Shujie15,Chen Kai6,Tamura Nobumichi7,Wu Phillip M.1,Fujioka Jun34,Tokura Yoshinori34,Shen Zhi-Xun12

Affiliation:

1. Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA, USA.

2. Department of Applied Physics, Stanford University, Stanford, CA, USA.

3. Department of Applied Physics, University of Tokyo, Tokyo, Japan.

4. RIKEN Center for Emergent Matter Science (CEMS), Saitama, Japan.

5. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Shanghai, China.

6. Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, China.

7. Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, CA, USA.

Abstract

Visualizing conducting domain walls When a metal undergoes a phase transition and becomes insulating, it sometimes also becomes magnetically ordered. It is possible that some metallicity survives along the boundaries of magnetic domains, the so-called domain walls, but the question is difficult to address directly in experiments. Ma et al. did just that by mapping out the conductance of the material Nd 2 Ir 2 O 7 in its low-temperature magnetic insulating phase, using microwave impedance microscopy. The magnetic domain walls showed up clearly in the images as regions of high conductance. Science , this issue p. 538

Funder

NSF

Gordon and Betty Moore Foundation

Japan Society for the Promotion of Science

National Science Foundation of China (NSFC)

China Scholarship Council

Emergent Phenomena in Quantum Systems (EPiQS)

Grant-in-Aid for Scientific Research

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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