Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering-Reference-Cited by-同舟云学术

Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering

Published:2000-06-09 Issue:5472 Volume:288 Page:1811-1814
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Hasan M. Z.¹,Isaacs E. D.²,Shen Z.-X.¹,Miller L. L.³,Tsutsui K.⁴,Tohyama T.⁴,Maekawa S.⁴

Affiliation:

1. Department of Applied Physics, Stanford Synchrotron Radiation Laboratory (SSRL), and Stanford Linear Accelerator Center (SLAC), Stanford University, Stanford, CA 94305, USA.

2. Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.

3. Department of Physics and Ames Laboratory, Iowa State University, Ames, IA 50011, USA.

4. Institute of Materials Research, Tohoku University, Sendai 980-8577, Japan.

Abstract

The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than 50 years of research. Well-developed momentum-resolved spectroscopies such as photoemission or neutron scattering cannot probe the full Mott gap. High-resolution resonant inelastic x-ray scattering revealed dispersive charge excitations across the Mott gap in a high–critical temperature parent cuprate (Ca 2 CuO 2 Cl 2 ), shedding light on the anisotropy of the Mott gap. These charge excitations across the Mott gap can be described within the framework of the Hubbard model.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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