Imaging of pure spin-valley diffusion current in WS 2 -WSe 2 heterostructures-Reference-Cited by-同舟云学术

Imaging of pure spin-valley diffusion current in WS 2 -WSe 2 heterostructures

Published:2018-05-25 Issue:6391 Volume:360 Page:893-896
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Jin Chenhao¹^ORCID,Kim Jonghwan¹²^ORCID,Utama M. Iqbal Bakti¹³^ORCID,Regan Emma C.¹⁴,Kleemann Hans¹^ORCID,Cai Hui⁵,Shen Yuxia⁵,Shinner Matthew James¹,Sengupta Arjun¹,Watanabe Kenji⁶^ORCID,Taniguchi Takashi⁶,Tongay Sefaattin⁵,Zettl Alex¹⁷⁸^ORCID,Wang Feng¹⁷⁸^ORCID

Affiliation:

1. Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA.

2. Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea.

3. Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA 94720, USA.

4. Graduate Group in Applied Science and Technology, University of California at Berkeley, Berkeley, CA 94720, USA.

5. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA.

6. National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.

7. Division of Material Science, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

8. Kavli Energy NanoSciences Institute at the University of California at Berkeley and Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

Abstract

Tracking the spin-valley current Taking advantage of the electron's spin and valley degrees of freedom requires a method for generating currents of carriers that have a particular spin or come from a particular valley in the electronic structure. Jin et al. used a heterostructure made out of adjacent layers of WSe 2 and WS 2 to create a spin-valley diffusion current without applying an external electric field. Instead, they used circularly polarized laser light to initiate the diffusion and a second laser pulse to image the propagation of the carriers. With long lifetimes and diffusion lengths, the method may be of practical use in future valleytronic devices. Science , this issue p. 893

Funder

Deutsche Forschungsgemeinschaft

NSF DMR

Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy

Elemental Strategy Initiative conducted by the MEXT, Japan and JSPS KAKENHI

National Science Foundation EFRI program

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference32 articles.

1. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides