Control of polarization in bulk ferroelectrics by mechanical dislocation imprint

Author:

Höfling Marion1ORCID,Zhou Xiandong1ORCID,Riemer Lukas M.2ORCID,Bruder Enrico1ORCID,Liu Binzhi3ORCID,Zhou Lin34ORCID,Groszewicz Pedro B.,Zhuo Fangping1ORCID,Xu Bai-Xiang1ORCID,Durst Karsten1ORCID,Tan Xiaoli3ORCID,Damjanovic Dragan2ORCID,Koruza Jurij1ORCID,Rödel Jürgen1ORCID

Affiliation:

1. Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany.

2. Group for Ferroelectrics and Functional Oxides, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.

3. Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011, USA.

4. Ames Laboratory, U.S. Department of Energy, Ames, IA 50011, USA.

Abstract

Imprinting oxides Dislocations can be problematic for the properties of functional oxides and are often avoided as a result. Höfling et al. found that introducing a network of dislocations to barium titanate actually enhanced the dielectric and piezoelectric properties. The authors introduced the dislocation network with uniaxial compression, which forced the material to have a domain structure that enhanced the piezoelectric coefficient by a factor of 19. This strategy should be a useful tool for optimizing properties of other functional oxides. Science , abe3810, this issue p. 961

Funder

National Science Foundation

Deutsche Forschungsgemeinschaft

Profile Area “PMP” of TU Darmstadt

Swiss National Science Foundation

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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