Model of degradation of InGaN/GaN LED during current tests taking into account the inhomogeneous distribution of temperature and current density in the heterostructure

Abstract

A diffusion kinetic model of the optical power degradation of an LED based on a double InGaN/GaN heterostructure during direct current tests is presented. According to the model, the main process causing a decrease in the optical power of the LED is the diffusion of Mg impurity atoms from the p-layer barrier of the heterostructure into the active region. The model takes into account the effect of non-uniform current distribution due to non-uniform heating of the chip by high-density current and can be used to predict the lifetime of the LED when operating in continuous and pulsed mode.