Abstract
A textured surface on a silicon solar cell effectively improves solar cell performance by reducing reflection losses. The standard process of pyramidal texturization on silicon wafers is widely implemented in manufacturing and laboratory wet chemical etching. Furthermore, the plasma etching process is usually used to create vertical hole texturization on the surface of silicon. In conjunction with that, laser texturization is known as an alternative method for plasma etching due to user-friendly equipment and a chemical-free process. The passivated pyramidal texturing on silicon wafers is classified as normal texturization. Meanwhile, an improvement of texturization with additional laser texturing on normal texturization Si is known as laser passivated-textured. The transmission of pyramidal textured silicon wafer demonstrates less absorption, and this is due to reflection losses on the front surface of the pyramidal textured silicon wafer. Any texturization will increase the short circuit current (Jsc), open circuit voltage (VOC) and efficiency by minimizing the surface reflection loss through effective photon trapping among textured structures. According to infrared (IR) transmission, a higher laser power of 114 W suggests lower reflection losses. Thus, the results from vertical hole texturization on silicon wafers via IR transmissions and cross-section Field Emission Scanning Electron Microscopy (FESEM) reveal a promising photo generation on the surface. The depth level of vertical holes created by laser due to deeper vertical holes that have been created will reduce the distance of minority carriers and trap more incident light among the walls. In addition, this procedure can be implemented as an alternative method to shorten the distance travel of minority carrier charges, and more light can penetrate deeper solar cells. This, ultimately, will overcome any problems related to optical losses.