Abstract
Abstract
Semiconductor films are essential in photocatalysis applications; however, the controlled production of certain films remains challenging and inefficient. Previous studies have mainly focused on deposition processes, heating rates, and doping of semiconductor oxides. In this paper, we propose a novel approach to fabricating tenorite (CuO) semiconductor films with varying concentrations (0.01, 0.02, 0.04, 0.06, and 0.1 g/ml) using a dip-coating technique. We investigate the effects of contact angles, 3D surface topography, and film thickness on the photoactivation properties, as these factors have received limited attention in previous research. The results demonstrate that higher-concentration tenorite films exhibit rougher surfaces, increased hydrophobicity, improved light-harvesting ability, enhanced charge separation, and higher active oxygen output. This approach has significant implications for tenorite film manufacturing and the efficient photocatalytic removal of organic contaminants with minimal environmental impact. Our study examines concentration variation in tenorite thin films produced through sol-gel processes and dip-coating. Wettability tests show a 21.47% improvement in the 0.1 g/ml film surface under indirect sunlight compared to darkness. Surface morphology analysis reveals an increased presence of grains with higher concentrations. Transmittance rates at 600 nm range from 0.02–90.94%. The direct optical bandgaps range from 2.74 to 1.21 eV, while the indirect bandgaps remain unaffected. The photocatalytic efficiency against dyes (MB) was affected by the concentration, crystal phase, size, thickness, wettability, surface roughness, and direct band-gap. These tenorite thin films demonstrate exceptional photocatalytic properties, being highly efficient, environmentally friendly, reusable, and stable, making them suitable for practical applications.
Publisher
Research Square Platform LLC