Investigation of the Structural and Optical Properties of Cu 2 SnS 3 Nanostructures Thin Films for Solar Cell Application

Abstract

Abstract In this study, an n-type silicon wafer's diode laser (red-650nm) is used to generate 30 mW n-type porous silicon by illuminating the surface of n-type substrates. To obtain a 0.785 cm2 etched area, a double-concave lens was used. Cu2SnS3 (CTS) thin films on glass substrates were deposited using a low-cost spin coating process. X-ray diffraction was used to study the structural properties of a Cu2SnS3 thin film. The films feature a polycrystalline tetragonal structure with a preferential orientation along the (112) plane, according to the researchers. As the annealing temperature was raised, the size of the crystallites grew larger. At temperatures of 200, 250, and 300ᵒC, FE-SEM pictures revealed that Cu2SnS3's surface was denser, with fewer voids. The grain size grows larger, and the surface morphology becomes rougher, according to AFM. As the annealing temperature was increased, the band gap of Cu2SnS3 thin films fell from 2-1.65 eV. With a high absorption coefficient of 104 cm− 1, CTS thin films show a direct optical band gap. The p-type character of the developed CTS films is confirmed by hall measurements. For a thin film annealed at 300 oC, the carrier concentration, resistivity, and mobility are 1.231×1023 cm− 3, 9.987 ×10− 7 Ω cm and 50.78cm2 V− 1 S− 1, respectively. The conversion efficiency of Al/Cu2SnS3/n-PSi/Al was 3.7 percent at 300 oC, according to the findings.