Abstract
Memristor is the fourth fundamental passive circuit element and a novel tool for modern electronics. While MOS transistors are the most important components in electronics, memristors will pave a new path towards more efficient electronic circuits with better performance. This paper studies the various models of memristors and proposes a model with new window function to overcome the latencies of previous models. We propose a Non Linear Ion Drift Model with a new window function that serves as a SPICE model to be simulated in computers to study and analyze the behavior of memristors. The proposed model surpasses the output values in terms of Current, Resistance and Maximum Power compared to other memristor models. We focused on these parameters with a view to ensure better efficiency from the proposed model. Our model achieved improvements of up to a double value in terms of current, compared to other models. The results demonstrate an efficient model that can be implemented as SPICE simulations of memristors for precise analysis of its behavior. The proposed method ensures the proper functioning of memristors that can be implemented in electronic circuits.