Dislocation evolution in GaN-based Laser Diodes under nano-indentation

Abstract

Abstract The multiplication and motion behavior of dislocations induced by surface damage or the failure of devices in GaN-based LDs were simulated by nano-indentation technique. The results shown that dislocations with burgers vector of b = 1/3 < 11\(\stackrel{-}{2}\)3> were introduced on either {11\(\stackrel{-}{2}\)2} <11\(\stackrel{-}{2}\)3>, or {1\(\stackrel{-}{1}\)01} <11\(\stackrel{-}{2}\)3> slip systems, and dislocations with burgers vector of b = 1/3 < 11\(\stackrel{-}{2}\)0> were introduced inevitably on {0001} <11\(\stackrel{-}{2}\)0> slip system. It is worth noting that dislocations on {1\(\stackrel{-}{1}\)01} slip planes underwent decomposition when passing through the AlGaN/InGaN interface, the screw component slip to the plane {0001} and the edge component were nailed at the interface. Inversely, dislocations on {11\(\stackrel{-}{2}\)2} slip planes exhibited smooth traverse through AlGaN and quantum well layers.