Affiliation:
1. Department of Material Science and Engineering, Tripura University, India
2. IBM India Pvt. Ltd. Kolkata, India
Abstract
This paper presents a detailed study of the current-voltage (I-V) and
capacitance-voltage (C-V) measurements made on a CdS/CdTe based solar cell
by numerical modeling. Implementation of the simulated cell having a
superstrate configuration was done with the help of SCAPS program using
defect density model. The I-V characterisation includes window and absorber
layer optimisation based on various factors including the impurity doping
concentration, thickness and defect density. The energy band diagram,
spectral response and currentvoltage plot of the optimised cell
configuration are shown. C-V characterisation (Mott-Schottky analysis) of
the solar cell is conducted at different low frequencies to determine the
flatband potential, carrier concentration and to validate the reliability of
the results. The optimum device performance was obtained when the active
layer was 2 ?m thick with a doping level of 1?1015/cm3.
Publisher
National Library of Serbia
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Mechanical Engineering,Energy Engineering and Power Technology,Control and Systems Engineering
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献