Affiliation:
1. Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan
2. National Nano Device Laboratories, National Applied Research Laboratories, Taiwan
Abstract
Reactions between different kinds of ceramics and silicon were studied to
evaluate ceramics as candidates for their use in the process of
silicon-crystal growth. Three types of ceramic plates, Al2O3, ZrO2 and
quartz (SiO2), were put into contact with a silicon wafer via annealing at
1450 ?C for 30min under an Ar atmosphere. Defects appeared at the Si-ceramics
interface. Among these, a crack and a dislocation pile up were found at the
Si-SiO2 dissolution couple. In addition, two intermetallic compounds,
Y2Si2O7 and Zr-Si, produced by the diffusion of Y, O and Zr from the ZrO2
into the Si, were found at the Si-ZrO2 dissolution couple. At the interface
of the Si-Al2O3 dissolution couple, no intermetallic compounds and few
defects were found. The oxygen concentration and electrical resistivity near
the interface were high and gradually decreased away from the interface for
all Si-ceramics dissolution couples.
Publisher
National Library of Serbia
Cited by
2 articles.
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