High-temperature oxidation behaviour of si3n4 nanowires with different diameters-Reference-Cited by-同舟云学术

High-temperature oxidation behaviour of si3n4 nanowires with different diameters

Published:2023 Issue:1 Volume:17 Page:39-46
ISSN:1820-6131
Container-title:Processing and Application of Ceramics
language:en
Short-container-title:PAC

Author:

Zhao Shuang¹,Yang Feiyue¹,Chen Jun¹,Li Kunfeng¹,Fei Zhifang¹,Yang Zichun¹

Affiliation:

1. School of Power Engineering, Naval University of Engineering, Wuhan, China

Abstract

?-Si3N4 nanowires with diameters of 100-180 nm (Si3N4-W1) and 420-510 nm (Si3N4-W2) were synthesized by a modified chemical vapour deposition (CVD) method and their microstructure changes after high-temperature oxidation were studied. The results showed that both Si3N4 nanowires were not significantly oxidized when the temperature was lower than 900?C. However, the Si3N4-W1 microstructure began to change significantly after oxidation at 1200?C, while the Si3N4-W2 microstructure remained almost unchanged. Moreover, the Si3N4- W1 and Si3N4-W2 nanowires oxidized significantly after treatment at 1400?C, with weight gain of 26.4% and 13.7%, respectively.

Publisher

National Library of Serbia

Subject

Ceramics and Composites

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