Affiliation:
1. KIIT University, School of Electronics Engineering, Bhubaneswar, Odisha, India
Abstract
In view of reduced electric field and avoiding source drain engineering, the
work exploresstrain effect in junctionless channel transistor. To achieve
scaled IOFF and maintain ION, here the device SG-OI JLCT is proposed. The
study discusses higher switching action with mole fraction x=0.25. The
dependency of ?M and the ND is responsible for maintaining constant current
for overall analysis.
Publisher
National Library of Serbia
Cited by
3 articles.
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