Reliability of computer memories in radiation environment

Author:

Fetahovic Irfan1,Dolicanin Edin1,Loncar Boris2,Kartalovic Nenad3

Affiliation:

1. State University of Novi Pazar, Novi Pazar

2. Faculty of Technology and Metallurgy, Belgrade

3. Institute of Electrical Engineering “Nikola Tesla”, Belgrade

Abstract

The aim of this paper is examining a radiation hardness of the magnetic (Toshiba MK4007 GAL) and semiconductor (AT 27C010 EPROM and AT 28C010 EEPROM) computer memories in the field of radiation. Magnetic memories have been examined in the field of neutron radiation, and semiconductor memories in the field of gamma radiation. The obtained results have shown a high radiation hardness of magnetic memories. On the other side, it has been shown that semiconductor memories are significantly more sensitive and a radiation can lead to an important damage of their functionality.

Funder

Ministry of Education, Science and Technological Development of the Republic of Serbia

Publisher

National Library of Serbia

Subject

Safety, Risk, Reliability and Quality,Nuclear Energy and Engineering

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