Affiliation:
1. State University of Novi Pazar, Novi Pazar
Abstract
The aim of this paper is applying statistical laws and enlargement law to
determine a redundancy level of nanotechnology computers with a pre-given
statistical confidence. We have tested radiation hardness of MOS memory
components (commercial EPROM memory) using both Monte Carlo simulation
method and experimental procedure. Then, by using the statistical
enlargement law, we have performed the analysis of redundancy optimization
of MOS structure for nanotechnology computers, under the influence of
background radiation, and obtained more than satisfying results.
Funder
Ministry of Education, Science and Technological Development of the Republic of Serbia
Publisher
National Library of Serbia
Subject
Safety, Risk, Reliability and Quality,Nuclear Energy and Engineering
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献