Affiliation:
1. Key Laboratory of Materials Design and Quantum Simulation, College of Science, Changchun University, Changchun, China
Abstract
In this work g-C3N4/CuS composite film was prepared by successive ion layer
adsorption and reaction (SILAR) method and used as the counter electrode in
quantum dot sensitized solar cell (QDSSCs). To configure the cell, CdSe and
CdS quantum dots acted as sensitizers on the photoanode side, polysulphide
was used as the electrolyte and copper sulphide was deposited into the
g-C3N4 film structure on the counter electrode side. Scanning electron
microscope and X-ray diffraction were used to characterize the morphology
and structure of the electrode materials, respectively. The photovoltaic
performance of the cell was analysed by a standard solar simulator. The
results revealed that the photoelectric conversion efficiency of the cell
reached 3.65% under condition of AM 1.5 and irradiation intensity of
100mW/cm2.
Publisher
National Library of Serbia