Author:
Dzurak A.S.,Simmons M.Y.,Hamilton A.R.,Clark R.G.,Brenner R.,Buehler T.M.,Curson N.J.,Gauja E.,McKinnon R.P.,Macks L.D.,Mitic M.,O’brien J.L.,Oberbeck L.,Reilly D.J.,Schofield S.R.,Stanley F.E.
Abstract
We discuss progress towards the fabrication and demonstration of a prototype silicon-based quantum computer. The devices are based on a precise array of 31P dopants embedded in 28Si. Fabrication is being pursued via two complementary pathways – a ‘top-down’ approach for near-term production of few-qubit demonstration devices and a ‘bottom-up’ approach for large-scale qubit arrays. The ‘top-down’ approach employs ion implantation through a multi-layer resist structure which serves to accurately register the donors to metal control gates and single-electron transistor (SET) read-out devices. In contrast the ‘bottom-up’ approach uses STM lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. Techniques for qubit read-out, which utilise coincidence measurements on novel twin-SET devices, are also presented.
Subject
Computational Theory and Mathematics,General Physics and Astronomy,Mathematical Physics,Nuclear and High Energy Physics,Statistical and Nonlinear Physics,Theoretical Computer Science
Cited by
4 articles.
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