Stress measurement at the interface between a Si substrate and diamond-like carbon/Cr/W films by the electronic backscatter diffraction method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=2/a=025504/pdf
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1. Intrinsic stress, island coalescence, and surface roughness during the growth of polycrystalline films
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3. Evaluation on residual stresses of silicon-doped CVD diamond films using X-ray diffraction and Raman spectroscopy
4. Improving diamond coating on Ti6Al4V substrate using a diamond like carbon interlayer: Raman residual stress evaluation and AFM analyses
5. X-ray diffraction measurement of residual stress in PZT thin films prepared by pulsed laser deposition
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1. Structure evolution and stress transition in diamond-like carbon films by glancing angle deposition;Applied Surface Science;2019-06
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