Polarity inversion of aluminum nitride by direct wafer bonding
Author:
Funder
Japan Society for the Promotion of Science
Japan Science and Technology Agency
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=3/a=031003/pdf
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1. High power AlGaN ultraviolet light emitters
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3. AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation
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2. Characterization of Ga-face/Ga-face and N-face/N-face interfaces with antiparallel polarizations fabricated by surface-activated bonding of freestanding GaN wafers;Japanese Journal of Applied Physics;2023-09-13
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