Relationship between effective mobility and border traps associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=3/a=034101/pdf
Reference10 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/µm
3. InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax
4. Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer
5. Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of fast and slow transient charging effect on reliability instability in In0.7Ga0.3As quantum-well MOSFETs with high-κ dielectrics;Japanese Journal of Applied Physics;2020-10-22
2. Dependency of electrical performances and reliability of 28 nm logic transistor on gate oxide interface treatment methods;Applied Physics Express;2020-09-22
3. Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress;Frontiers in Physics;2020-03-06
4. Hot carrier instability associated with hot carrier injection and charge injection in In0.7Ga0.3As MOSFETs with high-κ stacks;Japanese Journal of Applied Physics;2019-10-22
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