Photon emission and current-collapse suppression of AlGaN/GaN field-effect transistors with photonic–ohmic drain at high temperatures-Reference-Cited by-同舟云学术

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Photon emission and current-collapse suppression of AlGaN/GaN field-effect transistors with photonic–ohmic drain at high temperatures

Published:2018-06-13 Issue:7 Volume:11 Page:071003
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Tang Xi,Zhang Zhaofu,Wei Jin,Li Baikui,Wang Jiannong,Chen Kevin J.

Funder

National Natural Science Foundation of China

Shenzhen University

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=7/a=071003/pdf

Reference28 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. GaN-on-Si Power Technology: Devices and Applications

3. Trapping effects in GaN and SiC microwave FETs

4. Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

5. 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

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1. Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer;Micromachines;2022-05-19

2. Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs;IEEE Transactions on Electron Devices;2022-05

3. Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis;Japanese Journal of Applied Physics;2021-09-07

4. Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2019-12-23

5. Current collapse in high-Al channel AlGaN HFETs;Applied Physics Express;2019-06-05

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