Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=2/a=022101/pdf
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2. Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN;Semiconductor Science and Technology;2019-10-16
3. InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes;Nano Letters;2019-04-02
4. Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate;Applied Physics Letters;2017-06-26
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