Effect of nitrogen doping on the performance of Ge2Sb2Te5films in chemical mechanical polishing-Reference-Cited by-同舟云学术

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Effect of nitrogen doping on the performance of Ge2Sb2Te5films in chemical mechanical polishing

Published:2014-02-03 Issue:3 Volume:53 Page:031402
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shin Dong-Hee,Song Min-Jung,Kim Jin-Wook,Kim Gyu-Hyun,Hong Kwon,Lim Dae-Soon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Lower current operation of phase change memory cell with a thin TiO2 layer

2. A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations

3. Chalcogenide-based non-volatile memory technology

4. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications

5. Characterization of Amorphous Phases of Ge2Sb2Te5Phase-Change Optical Recording Material on Their Crystallization Behavior

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories;Materials Advances;2023

2. Ga doping induced structural and optical modification in $$\hbox {Ge}_{2}\hbox {Sb}_{2}\hbox {Te}_{5}$$ thin films;Journal of Materials Science: Materials in Electronics;2022-05-20

3. Investigation of the evolution of free carriers during femtosecond laser-induced ultrafast amorphization in nitrogen doped Ge2Sb2Te5 films;Journal of Physics: Conference Series;2020-11-01

4. Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices;Applied Physics Letters;2020-03-30

5. Understanding of relationship between dopant and substitutional site to develop novel phase-change materials based on In3SbTe2;Japanese Journal of Applied Physics;2019-02-05

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