Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=6/a=061502/pdf
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1. Low voltage high speed SiO/sub 2/AlGaN/AlLaO/sub 3/TaN memory with good retention
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3. Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric
4. A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
5. Interfacial chemical states of resistance-switching metal/Pr0.7Ca0.3MnO3 interfaces
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process;Journal of Physics D: Applied Physics;2018-05-08
2. Single-crystalline CuO nanowires for resistive random access memory applications;Applied Physics Letters;2015-04-27
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