Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors-Reference-Cited by-同舟云学术

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Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors

Published:2014-01-01 Issue:4S Volume:53 Page:04EF10
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Neung-Hee,Lee Minseong,Choi Woojin,Kim Donghwan,Jeon Namcheol,Choi Seonhong,Seo Kwang-Seok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference33 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Fabrication and characterization of GaN FETs

3. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

4. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

5. Passivation effects in Ni∕AlGaN∕GaN Schottky diodes by annealing

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment;Microelectronics Journal;2024-06

2. Fabrication, and Direct Current and cryogenic analysis of SF₆-treated AlGaN/GaN Schottky barrier diodes;Journal of Vacuum Science & Technology B;2023-01

3. Low etching damage surface obtained by a mixed etching method and the influence of surface states on the C–V characteristics of AlGaN/GaN Schottky barrier diodes;Materials Science in Semiconductor Processing;2022-08

4. Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications;Materials;2021-11-01

5. DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation;Semiconductor Science and Technology;2021-07-26

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