Highly selective and precisely controlled aluminum etching by Ar/HBr/CH3F/O2gas chemistry
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference33 articles.
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic-Scale Etching Mechanism of Aluminum with Fluorine-Based Plasma;The Journal of Physical Chemistry C;2022-08-12
2. SiN etching characteristics of Ar/CH3F/O2plasma and dependence on SiN film density;Japanese Journal of Applied Physics;2016-07-05
3. Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon;Journal of Physics D: Applied Physics;2016-05-17
4. Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
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