Effects of Nb2O5and SiO2buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass-Reference-Cited by-同舟云学术

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Effects of Nb2O5and SiO2buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

Published:2014-07-03 Issue:8S3 Volume:53 Page:08NG01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hong Chan-Hwa,Shin Jae-Heon,Park Nae-Man,Kim Kyung-Hyun,Kim Bo-Sul,Kwak Joon-Seop,Ju Byeong-Kwon,Cheong Woo-Seok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=8S3/a=08NG01/pdf

Reference29 articles.

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3. Touch-sensitive screens: the technologies and their application

4. 38.2: A Novel Design for Internal Touch Display

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer onp-GaN for InGaN/GaN Light-Emitting Diodes;Advanced Science;2017-12-19

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