Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile-Reference-Cited by-同舟云学术

Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile

Published:2016-09-12 Issue:10 Volume:55 Page:104201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wei Sufen,Zhang Guohe,Shao Zhibiao,Huang Huixiang,Geng Li

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=10/a=104201/pdf

Reference31 articles.

1. Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

2. BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control

3. Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs

4. Short-channel effect in fully depleted SOI MOSFETs

5. Short-channel single-gate soi mosfet model

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