Effect of double superlattice interlayers on growth of thick GaN epilayers on Si(110) substrates by metalorganic chemical vapor deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=5S/a=05FB02/pdf
Reference29 articles.
1. GaN, AlN, and InN: A review
2. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
3. GaN on Si Substrate with AlGaN/AlN Intermediate Layer
4. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers
5. Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers;Vacuum;2024-01
2. Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition;Japanese Journal of Applied Physics;2017-12-14
3. Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates;Applied Physics Letters;2017-05-08
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