Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4S/a=04ED01/pdf
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1. Self-Align Recessed Source Drain Ultrathin Body SOI MOSFET
2. Comprehensive study on vth variability in silicon on Thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation
3. Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain
4. Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors
5. High Ion/Ioff Ge-source ultrathin body strained-SOI tunnel FETs
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