Conductive Filament Expansion in TaOxBipolar Resistive Random Access Memory during Pulse Cycling-Reference-Cited by-同舟云学术

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Conductive Filament Expansion in TaOxBipolar Resistive Random Access Memory during Pulse Cycling

Published:2013-11-01 Issue:11R Volume:52 Page:114201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ninomiya Takeki,Katayama Koji,Muraoka Shunsaku,Yasuhara Ryutaro,Mikawa Takumi,Wei Zhiqiang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

2. Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs

3. High switching endurance in TaOx memristive devices

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spinel ferrites for resistive random access memory applications;Emergent Materials;2023-11-22

2. Visualizing the Local Composition Changes during Resistive Switching in Planar TaOx-ReRAMs;ACS Applied Electronic Materials;2023-07-26

3. The improvement of the embedded Ag nanoislands on the performance of Au/Ag/HfOx/HfO2/Ag-NIs/Au devices;Journal of Materials Science: Materials in Electronics;2023-05

4. Resistive Switching Crossbar Arrays Based on Layered Materials;Advanced Materials;2023-01-13

5. Voltage‐Tunable Ultra‐Steep Slope Atomic Switch with Selectivity over 10 10;Small;2021-06-09

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