Influence of GaN Barrier Thickness on Optical Properties of In-Graded InGaN/GaN Multiple Quantum Wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=8/a=081001/pdf
Reference42 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
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4. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
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1. Investigation of Modulation Bandwidth of InGaN Green Micro-LEDs by Varying Quantum Barrier Thickness;IEEE Transactions on Electron Devices;2022-08
2. Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition;Applied Surface Science;2020-04
3. Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded;Nanoscale Research Letters;2019-05-21
4. Simulation of full-color III-nitride LED with intermediate carrier blocking layers;Optical and Quantum Electronics;2016-11-09
5. Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well;IEEE Photonics Journal;2016-06
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